METHOD FOR PRODUCING AN IMPROVED CONTACT BETWEEN A SILVER-CONTAINING CONDUCTIVE TRACK AND SILICON

摘要

The invention relates to a method for producing a silver-containing conductive track on a silicon substrate coated with an antireflection layer, with a weakly doped interface layer having a sheet resistance > 60 ?/sq and a more highly doped contact region with respect to the conductive track at the surface of the silicon substrate, wherein the sheet resistance of the contact region is < 60 ?/sq, wherein a self-doping material containing silver and dopants is applied locally to the silicon substrate and the silicon substrate with the self-doping material is heated. The problem addressed by the present invention is that of providing a cost-effective method for producing silver-containing conductive tracks on a silicon substrate surface coated with an antireflection coating; in this case, firstly the intention is to achieve a good contact between conductive tracks and substrate, for which purpose, by means of the substrate being more highly doped, the sheet resistance of the substrate surface in the contact region with the conductive tracks is reduced to values of less than 60 ?/sq; secondly, even when cost-effective silicon substrates, for example polycrystalline silicon substrates, are used, the intention is to avoid short circuits at the pn junction of the solar cell as a result of silver crystals. The problem is solved by means of a method of the generic type stated wherein the self-doping material contains silver, dopants and tin.