发明名称 PREPARATION METHOD OF HIGH DENSITY ZINC OXIDE NANOMETER GRANULES
摘要 <p>This invention relates to a preparation method of high density zinc oxide nanometer granules. In the method, diethyl zinc vapour diluted by inert gas and vapour of hydrogen peroxide aqueous solution are used as precursors, and high density zinc oxide nanometer granules are grown in atom layer deposition equipment in the manner of atom layer deposition. In the method, precursors, i.e., diethyl zinc vapour and vapour of hydrogen peroxide aqueous solution, are introduced into the reaction chamber alternatively in pulse mode, purging with inert gas between the introduction of the two precursors. By this invention, high density zinc oxide nanometer granules are produced by atom layer deposition technology, with the advantages of simple procedure, low cost, and exactly control of the size of nanometer granules. The obtained zinc oxide nanometer granules have average diameter of about 5~25nm, height of 2~10nm, and density of 1.0×1010~1.0×1011cm-2, and can be used as photoelectric conversion material in solar cells.</p>
申请公布号 WO2012116477(A1) 申请公布日期 2012.09.07
申请号 WO2011CN00912 申请日期 2011.05.30
申请人 FUDAN UNIVERSITY;DING, SHIJIN;QIAN, KEJIA;ZHANG, WEI 发明人 DING, SHIJIN;QIAN, KEJIA;ZHANG, WEI
分类号 C01G9/03;C23C16/40;C30B25/02;H01L21/365 主分类号 C01G9/03
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