发明名称 SUBSTRATE AND SEPARATOR, GROWN THIN FILM AND METHOD OF GROWTH, SEPARATION, AND HEATING, EPITAXIAL WAFER, AND LIGHT EMITTING DIODE
摘要 The present invention relates to a combination substrate, a substrate for preventing warpage, and a separator, so as to: obtain grown thin film(s) which are smoothly divided into a preset size during a growing process of the grown thin film, but are divided after the grown thin film is completely grown by omitting the process of dividing the grown thin film into the desired size, in order to simplify the production process and reduce manufacturing cost; smoothly form a recess part within a predetermined thickness range of the grown thin film during the thin film growing process; prevent the warpage phenomenon of the substrate from occurring; provide a grown thin film having a low rate of defects and high quality; more uniformly heat the substrates; and improve productivity and quality using small piece chip-type substrates. The present invention also relates to a method for growing the growth thin film using the substrate, a separation method, a substrate heating method used for the grown thin film obtained through the above-described method(s) and a chemical deposition process, a light emitting diode, a vertical type light emitting diode, and an epitaxial wafer.
申请公布号 WO2012060600(A3) 申请公布日期 2012.09.07
申请号 WO2011KR08235 申请日期 2011.11.01
申请人 LEE, HYEONGGON 发明人 LEE, HYEONGGON
分类号 H01L21/20 主分类号 H01L21/20
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