SOLID-STATE IMAGING DEVICE

摘要

The solid-state imaging device (101) as laid out in the present invention is provided with a substrate (318), a plurality of lower electrodes (311) which are arranged in a matrix above the substrate (318) so that each is electrically separated, an ultra-thin dielectric film (310) which completely covers the plurality of lower electrodes (311) and which has been planarized, a photoelectric conversion film (308) which is formed above the ultra-thin dielectric film (310) and which converts light to a signal charge, an upper electrode (307) which is formed above the photoelectric conversion film (308), and a signal read circuit (220) which is formed upon the substrate (318) and which generates a read signal corresponding to the signal charge by detecting variation in current or voltage occurring at each of the plurality of lower electrodes (311). The ultra-thin dielectric film (310) is capable of conducting the electrons and/or the holes.