| 摘要 |
<p>Disclosed is a nitride-based light-emitting element having a reverse p-n structure, in which a p-type nitride layer is first formed on a growth substrate, and a method for manufacturing same. The nitride-based light-emitting element according to the present invention comprises: a growth substrate; a powder-type seed layer, which is formed on the growth substrate, for growing nitride; a p-type nitride layer, which is formed on the seed layer for growing nitride; a light-emitting active layer, which is formed on the p-type nitride layer; and an n-type ZnO layer, which is formed on the light-emitting active layer. The nitride-based light-emitting element according to the present invention has the advantage of allowing superior crystallinity and high luminance by first forming the p-type nitride layer on the growth layer and then forming the n-type ZnO layer, which has a relatively low growth temperature, instead of an n-type nitride layer.</p> |
