发明名称 |
MEMBRANE-FORMING COMPOSITION CONTAINING SILICON FOR MULTILAYERED RESIST PROCESS AND PATTERN FORMATION METHOD |
摘要 |
<p>The invention is a film-forming composition containing silicon for a multilayered resist process containing [A] a polysiloxane and [B] an electron receptor. The electron receptor [B] is preferably at least one type of compound selected from the group consisting of quinone compounds, quinodimethane compounds, dibenzofuran compounds, and compounds represented by the following formulas (1-1) and (1-2). Polysiloxane [A] is a product of the hydrolysis and condensation of a compound comprising the silane compound represented by the following formula (2).</p> |
申请公布号 |
WO2012117949(A1) |
申请公布日期 |
2012.09.07 |
申请号 |
WO2012JP54475 |
申请日期 |
2012.02.23 |
申请人 |
JSR CORPORATION;FUJISAWA TOMOHISA;ANNO YUSUKE;TAKANASHI KAZUNORI |
发明人 |
FUJISAWA TOMOHISA;ANNO YUSUKE;TAKANASHI KAZUNORI |
分类号 |
G03F7/11;C08G77/04;G03F7/26;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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