发明名称 MEMBRANE-FORMING COMPOSITION CONTAINING SILICON FOR MULTILAYERED RESIST PROCESS AND PATTERN FORMATION METHOD
摘要 <p>The invention is a film-forming composition containing silicon for a multilayered resist process containing [A] a polysiloxane and [B] an electron receptor. The electron receptor [B] is preferably at least one type of compound selected from the group consisting of quinone compounds, quinodimethane compounds, dibenzofuran compounds, and compounds represented by the following formulas (1-1) and (1-2). Polysiloxane [A] is a product of the hydrolysis and condensation of a compound comprising the silane compound represented by the following formula (2).</p>
申请公布号 WO2012117949(A1) 申请公布日期 2012.09.07
申请号 WO2012JP54475 申请日期 2012.02.23
申请人 JSR CORPORATION;FUJISAWA TOMOHISA;ANNO YUSUKE;TAKANASHI KAZUNORI 发明人 FUJISAWA TOMOHISA;ANNO YUSUKE;TAKANASHI KAZUNORI
分类号 G03F7/11;C08G77/04;G03F7/26;H01L21/027 主分类号 G03F7/11
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