发明名称 ETCHING AND HOLE ARRAYS
摘要 Lithographic and nanolithographic methods that involve patterning a first compound on a substrate surface, exposing non-patterned areas of the substrate surface to a second compound and removing the first compound while leaving the second compound intact. The resulting hole patterns can be used as templates for either chemical etching of the patterned area of the substrate or metal deposition on the patterned area of the substrate.
申请公布号 US2012225251(A1) 申请公布日期 2012.09.06
申请号 US201213473536 申请日期 2012.05.16
申请人 MIRKIN CHAD A.;SALAITA KHALID;NORTHWESTERN UNIVERSITY 发明人 MIRKIN CHAD A.;SALAITA KHALID
分类号 B32B3/10;B05D5/00;B05D5/12;B05D7/14;B32B3/30;B82Y30/00;B82Y40/00;C25D5/02;H01L21/20;H01L21/30 主分类号 B32B3/10
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