| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that in a semiconductor storage device including a plurality of main word lines, there exists such a request that the plurality of main word lines are simultaneously activated, however, a driver having capability that can drive one main word line cannot simultaneously activate the plurality of the main word lines, and accordingly a semiconductor storage device which simultaneously activates the plurality of the main word lines is desired. <P>SOLUTION: The semiconductor storage device shown in Fig. 1 includes: first and second main word lines; and a control circuit which activates the first main word line at first timing, and activates the second main word line at second timing different from the first timing while the activated state of the first main word line is maintained. <P>COPYRIGHT: (C)2012,JPO&INPIT |
