| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus by which discharge start and discharge maintenance are easily performed even at low gas pressure of 1 Pascal or less and plasma damage on a substrate surface is minimized, and to provide a large area plasma generation apparatus and plasma processing apparatus. <P>SOLUTION: A plasma processing apparatus of which a low inductance inductively-coupled antenna conductor is installed in a plasma processing container includes a first high frequency power source for maintaining discharge plasma and a second high frequency power source that supplies high-frequency power having a frequency higher than that of the first high frequency power source, as a high frequency power source that supplies high-frequency power to the low inductance inductively-coupled type antenna conductor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
