发明名称 BASE MATERIAL WITH ETCHING MASK AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a base material with an etching mask capable of high-resolution patterning, and a manufacturing method thereof. <P>SOLUTION: A photosensitive material is applied on a surface of a base material, a resist pattern is formed by exposure and development. A DLC coating film is formed on the surface of the base material and the resist pattern, the DLC coating film formed on the resist pattern is peeled off with the resist pattern, and a DLC pattern is formed on the surface of the base material. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012169316(A) 申请公布日期 2012.09.06
申请号 JP20110026688 申请日期 2011.02.10
申请人 THINK LABORATORY CO LTD 发明人 SHIGETA KAKU;SUGAWARA SHINTARO;SHIGETA TATSUO
分类号 H01L21/306 主分类号 H01L21/306
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