| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ion sensor or the like which solves a failure of reference electrode and is usable under a severe environment. <P>SOLUTION: Sensitivity of the terminal of a semiconductor surface at the gate portion of a second p channel field effect transistor against measurement target ions is set to be higher than sensitivity of the terminal of a semiconductor surface at the gate portion of a first p channel field effect transistor against the measurement target ions. The semiconductor surface in the first p channel field effect transistor has diamonds. <P>COPYRIGHT: (C)2012,JPO&INPIT |
