| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser which allows the suppression of an unexpected deterioration, resulting in the increase in the reliability, and a method of manufacturing the semiconductor laser. <P>SOLUTION: The semiconductor laser comprises a laser structure having a main emission side end face and a rear end face opposed to each other. On at least one of the main emission side end face and the rear end face, a multilayer film is formed, which includes a high-refraction-index film, and a reflectance-control film including at least one layer from the side of the laser structure in turn. The high-refraction-index film is made of a material higher in refraction index than that of the layer of the reflectance-control film closest to the laser structure. The material of the high-refraction-index film is at least one of oxides including tantalum oxide, hafnium oxide, zirconium oxide, niobium oxide, and titanium oxide, nitrides including silicon nitride, boron nitride, hafnium nitride, and zirconium nitride, and carbides including silicon carbide, diamond, and diamond-like carbon. <P>COPYRIGHT: (C)2012,JPO&INPIT |
