发明名称 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 Provided is a resistance element which is, when forming the resistance element including a resistor having a small thickness, less liable to cause disconnection of the resistor. Tip regions of electrodes which are formed by stacking a barrier metal film and an aluminum electrode film are formed so as to be single-layer barrier metal electrodes, and the resistor for electrically connecting the parallel barrier metal electrodes to each other is formed by lift-off.
申请公布号 US2012225535(A1) 申请公布日期 2012.09.06
申请号 US201213409234 申请日期 2012.03.01
申请人 KATO SHINJIRO;HARADA HIROFUMI 发明人 KATO SHINJIRO;HARADA HIROFUMI
分类号 H01L21/02 主分类号 H01L21/02
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