SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which variation in electric characteristics is hard to occur and which has excellent electric characteristics, and a manufacturing method of the semiconductor device.

SOLUTION: A semiconductor device manufacturing method comprises: forming a ground insulation film on a substrate; forming a first oxide semiconductor film on the ground insulation film; forming a second oxide semiconductor film by performing first heating processing after forming the first oxide semiconductor film; subsequently forming a third oxide semiconductor film by performing preferential etching; forming an insulation film on a first insulation film and the third oxide semiconductor film; forming sidewall insulation films contacting at least lateral faces of the third oxide semiconductor film by polishing a surface of the insulation film so as to expose a surface of the third oxide semiconductor film; subsequently, forming a source electrode and a drain electrode on the sidewall insulation films and the third oxide semiconductor film; and forming a gate insulation film and a gate electrode.

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