| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state imaging device which can simultaneously perform photographing of a visible image based on visible light reflected from a subject and photographing of an infrared image based on infrared light. <P>SOLUTION: In a semiconductor substrate 1, an R light detection/photoelectric conversion part 3r, a G light detection/photoelectric conversion part 3g and a B light detection/photoelectric conversion part 3b are arranged two-dimensionally. Above each of the photoelectric conversion parts in the substrate 1, a photoelectric conversion part including a pair of electrodes 11, 13 and a photoelectric conversion film 12 provided between the electrodes 11, 13 is formed. The photoelectric conversion film 12 has an absorption peak of an absorption spectra within a combined range of a visible range and an infrared range in the infrared range; includes an organic photoelectric conversion material generating electric charge corresponding to absorbed light; and transmits 50% or more of light in the visible range as a whole. Above the electrode 13, color filters 13r, g, b corresponding to each of the photoelectric conversion parts in the substrate are provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
