| 摘要 |
<P>PROBLEM TO BE SOLVED: To accurately perform control of a plated film thickness. <P>SOLUTION: The method for manufacturing a semiconductor device includes a plating step of filling a plurality of recessed parts provided in an insulation film formed on a semiconductor substrate with a conductive material by performing plating processing. In the method, the plating step includes a step (S104) of performing the plating processing at first current density which is obtained by correcting predetermined first reference current density on a basis of a surface area ratio Sr=S<SB POS="POST">1</SB>/S<SB POS="POST">2</SB>between a first surface area S<SB POS="POST">1</SB>which includes a sidewall area of each of the plurality of recessed parts and a second surface area S<SB POS="POST">2</SB>which does not include the sidewall area of each of the plurality of recessed parts, on the entire surface of the semiconductor substrate, when a fine recessed part having a predetermined width or narrower out of the plurality of recessed parts is filled with the conductive material. <P>COPYRIGHT: (C)2012,JPO&INPIT |
