| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor device which can be manufactured through a non-complicated process and is high in dielectric strength. <P>SOLUTION: A method for manufacturing a silicon carbide semiconductor device of the present invention includes: (a) a step of preparing a SiC substrate 1 comprising a first conductivity type silicon carbide semiconductor, as a base; (b) a step of forming a recessed structure 4 surrounding an element region using a resist pattern 3 on the SiC substrate 1; and (c) a step of forming an ion implantation layer 6 as a second conductivity type impurity layer within the surfaces of a recessed bottom surface and a recessed side surface of the recessed structure 4 by impurity implantation via the resist pattern 3, after the step (b). In the step (c), the impurity implantation is performed by oblique-rotating ion implantation. <P>COPYRIGHT: (C)2012,JPO&INPIT |
