发明名称 |
Method For Fabricating Semiconductor Wafers For The Integration of Silicon Components With Hemts, And Appropriate Semiconductor Layer Arrangement |
摘要 |
The invention describes a method for fabricating silicon semiconductor waferswith the layer structures from III-V semiconductor layers for the integration of HEMTs based on semiconductor III-V layers with silicon components. SOI silicon semiconductor wafersare used, the active semiconductor layer of which has the III-V semiconductor layers (24) of the HEMT design (2) placed on it stretching over two mutually insulated regions (24a, 24b) of the active silicon layer. An appropriate layer arrangement is likewise disclosed.
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申请公布号 |
US2012223367(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201013505101 |
申请日期 |
2010.11.02 |
申请人 |
KITTLER GABRIEL;LERNER RALF;X-FAB SEMICONDUCTOR FOUNDRIES AG |
发明人 |
KITTLER GABRIEL;LERNER RALF |
分类号 |
H01L29/778;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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