发明名称 |
NON-VOLATILE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME |
摘要 |
A non-volatile memory device includes a substrate including a plurality of active regions and a plurality of device isolating trenches formed between a respective one of each of the active regions along a first direction in the substrate. A plurality of gate structures each including a tunnel insulating layer pattern, a floating gate electrode, a dielectric layer pattern and a control gate electrode is formed on the substrate. A first insulating layer pattern is provided within the device isolating trenches. A second insulating layer pattern is formed along an inner surface portion of a gap between the gate structures. An impurity doped polysilicon pattern is formed on the second insulating layer pattern in the gap between the gate structures. |
申请公布号 |
US2012223379(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201213407187 |
申请日期 |
2012.02.28 |
申请人 |
OH HYUN-SIL;HUR SUNG-HOI;KIM DAE-SIN |
发明人 |
OH HYUN-SIL;HUR SUNG-HOI;KIM DAE-SIN |
分类号 |
H01L27/105;H01L21/762 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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