发明名称 NITRIDE SEMICONDUCTOR DIODE
摘要 In a Schottky electrode formation region on a nitride semiconductor, the total length of junctions of Schottky electrodes and a surface of a nitride semiconductor layer is longer than the perimeter of the Schottky electrode formation region. The total length is preferably 10 times longer than the perimeter. For example, the Schottky electrodes are formed concentrically and circularly.
申请公布号 US2012223337(A1) 申请公布日期 2012.09.06
申请号 US201213349959 申请日期 2012.01.13
申请人 TERANO AKIHISA;MOCHIZUKI KAZUHIRO;ISHIGAKI TAKASHI;HITACHI, LTD. 发明人 TERANO AKIHISA;MOCHIZUKI KAZUHIRO;ISHIGAKI TAKASHI
分类号 H01L29/16;H01L29/20 主分类号 H01L29/16
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