发明名称 |
NITRIDE SEMICONDUCTOR DIODE |
摘要 |
In a Schottky electrode formation region on a nitride semiconductor, the total length of junctions of Schottky electrodes and a surface of a nitride semiconductor layer is longer than the perimeter of the Schottky electrode formation region. The total length is preferably 10 times longer than the perimeter. For example, the Schottky electrodes are formed concentrically and circularly. |
申请公布号 |
US2012223337(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201213349959 |
申请日期 |
2012.01.13 |
申请人 |
TERANO AKIHISA;MOCHIZUKI KAZUHIRO;ISHIGAKI TAKASHI;HITACHI, LTD. |
发明人 |
TERANO AKIHISA;MOCHIZUKI KAZUHIRO;ISHIGAKI TAKASHI |
分类号 |
H01L29/16;H01L29/20 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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