SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To solve the problem that conventional DRAMs need refreshing every tens of milliseconds for holding data, which leads to the increase in their power consumption, and the problem of the deterioration of a transistor frequently switched between ON and OFF states which comes to the fore with the increase in the memory capacity, and the progress of the microfabrication of transistors.

SOLUTION: The semiconductor device comprises a transistor having a trench structure involving a trench for a gate electrode and a trench for device isolation, and having an oxide semiconductor. With the semiconductor device, the development of a short channel effect can be suppressed by appropriately setting the depth of a trench for a gate electrode even when the distance between source and drain electrodes is made smaller.

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