| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can downsize the whole semiconductor device and be manufactured without complicating processes even in the semiconductor device in which SOI MISFET used as a low voltage region and a bulk MISFET used as a high voltage region coexist, and a manufacturing method of the semiconductor device. <P>SOLUTION: A well diffusion layer region 6, drain regions 9, 11, 14, 16, a gate insulation film 5 and a gate electrode 20 of an SOI MISFET 100 and a bulk MISFET 200 are formed in the same processes by using a single crystal semiconductor substrate 1 and an SOI substrate having a thin single crystal semiconductor thin film (SOI layer) 3 isolated from the single crystal semiconductor substrate by a thin embedded insulation film 4. Because the bulk MISFET and the SOI MISFET are formed on the same substrate, an occupied area of the substrate can be reduced. Because the SOI MISFET and the bulk MISFET are manufactured by common manufacturing processes, simple processes can be achieved. <P>COPYRIGHT: (C)2012,JPO&INPIT |
