| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of growing In(x)Al(y)Ga(1-x-y)N layers that have high material quality and are suitable for use in electronic, optoelectronic and photovoltaic devices. <P>SOLUTION: Provided is a method for growing an In<SB POS="POST">(x)</SB>Al<SB POS="POST">(y)</SB>Ga<SB POS="POST">(1-x-y)</SB>N layer (where x is greater than zero and less than or equal to one, y is greater than or equal to zero and less than or equal to one, and the sum of x and y is less than or equal to one). The growing method includes supplying plasma-activated nitrogen atoms as a source of nitrogen for the In<SB POS="POST">(x)</SB>Al<SB POS="POST">(y)</SB>Ga<SB POS="POST">(1-x-y)</SB>N layer to a growth surface, and simultaneously supplying indium atoms and nitrogen-containing molecules to the growth surface. A flux of the plasma-activated nitrogen atoms supplied to the growth surface is at least four times higher than the total of a flux of aluminium atoms and a flux of gallium atoms also supplied to the growth surface, where either the aluminium or gallium atom flux may or may not be zero. <P>COPYRIGHT: (C)2012,JPO&INPIT |
