| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of less occupied area thereby enabling high integration and high storage capacity. <P>SOLUTION: A transistor having a first control gate, a second control gate and a storage gate is used. The storage gate is made to be a conductor, and after a specific potential is supplied to the storage gate, at least a part of the storage gate is made to be an insulator and to hold the potential. Information writing is performed such that each potential of the first and second control gates is made to be a potential that the storage gate is made to be the conductor, a potential of information to be stored is supplied to the storage gate and a potential of at least one of the first and the second control gates is made to be a potential that the storage gate is made to be the insulator. Information reading is performed such that a potential of the second control gate is made to be a potential that the storage gate is made to be the insulator, a potential is supplied to wiring connected to one of the source and the drain of the transistor, subsequently a potential for reading is supplied to the first control gate, and a potential of a bit line connected to the other of the source and the drain is detected. <P>COPYRIGHT: (C)2012,JPO&INPIT |
