发明名称 ADJUSTABLE PROGRAMMING SPEED FOR NAND MEMORY DEVICES
摘要 Embodiments of the invention describe methods, systems and apparatuses to improve solid state device (SSD) write speed by efficiently utilizing error correction code executed for the device. SSDs may be comprised of several NAND memory devices. It is understood that such devices tend to have a raw bit error rate (RBER) that is related to the program/erase cycle count for the device. Embodiments of the invention efficiently use system ECC by changing the operating conditions of the SSD to better utilize the robustness of the implemented ECC algorithm. For example, embodiments of the invention may alter the programming voltage supplied to an SSD to increase write speed; such an increase may increase the RBER of the device, but will not affect the accuracy of such operations due to the ECC that is provisioned for end of life storage fidelity (i.e., the RBER that will occur at the end of life).
申请公布号 US2012226959(A1) 申请公布日期 2012.09.06
申请号 US201113039553 申请日期 2011.03.03
申请人 XIE NINGDE;GOLDMAN MATTHEW;KHAN JAWAD B.;FABER ROBERT W. 发明人 XIE NINGDE;GOLDMAN MATTHEW;KHAN JAWAD B.;FABER ROBERT W.
分类号 H03M13/05;G06F11/10 主分类号 H03M13/05
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