| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an LED which has desirable light extraction efficiency and increases a contact region of a p-type electrode thereby improving ohmic contact resistance. <P>SOLUTION: A light-emitting diode (LED) is provided together with a manufacturing method of the same. The LED comprises: a conductive n-type region 2 formed on a substrate 1; an active region formed on the n-type region; a first p-type region 4 formed on the active region; a plurality of nanostructures 5 formed on the first p-type region 4 so as to perform light extraction from the active region 3 and each having a diameter of less than 500 nm; a second p-type region 6 regrown so as to form a non-planar surface on the first p-type region 4 in combination with the nanostructures; and a p-type electrode formed on the non-planar surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
