NONVOLATILE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of preventing a reliability drop due to a reduction in read margin, by providing a driving signal with a same rising slope to a memory cell array.

SOLUTION: A nonvolatile memory device in an embodiment of the present invention comprises: a memory cell array including a plurality of memory cells stacked in a direction perpendicular to a substrate; a row selecting circuit coupled with the memory cell array via a word line; and a voltage generator circuit that generates a voltage provided to the word line. The voltage generator circuit generates the voltage in a method of gradually increasing the voltage to a target voltage level. The nonvolatile memory device in the embodiment of the present invention can provide a driving signal with a same rising slope to the memory cell array. Therefore, it is possible to prevent a reliability drop due to a reduction in read margin.

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