| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which has a sufficient MR ratio, and a method for manufacturing the same. <P>SOLUTION: A magnetoresistance effect element of the present invention comprises: a laminate provided with a first magnetic layer 14, a second magnetic layer 18, and a spacer layer 16 provided between the first magnetic layer 14 and the second magnetic layer 18; and a pair of electrodes 11 and 20 for making a current flow perpendicularly to a film surface of the laminate. The spacer layer 16 includes an oxide layer 21 containing at least one element selected from Zn, In, Sn, and Cd, and at least one element selected from Fe, Co, and Ni. <P>COPYRIGHT: (C)2012,JPO&INPIT |
