| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a laminated substrate having a crystalline aluminum carbide layer and a gallium nitride layer, and to provide a method for manufacturing the same. <P>SOLUTION: In this laminated substrate 100 formed by laminating and arranging successively a crystalline GaN layer 10 and a crystalline AlC layer 20 on a sapphire substrate, a silicon carbide substrate or an aluminum nitride substrate as a substrate 1, trimethyl aluminum as aluminum-containing gas and methane as catbon-containing gas are supplied as a growing condition of an aluminum carbide crystal, to thereby promote growth by a metal organic chemical vapor deposition method. As a growth temperature, ≥700°C is preferable, and ≥1,100°C is more preferable. <P>COPYRIGHT: (C)2012,JPO&INPIT |
