发明名称 SOLID STATE IMAGE SENSOR, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To enhance the image quality of a captured image. <P>SOLUTION: A first light shielding part 313A is provided in a trench TR formed in a pixel separation part 301 of a semiconductor substrate 101. A second light shielding part 313B is provided on the upper surface of the first light shielding part 313A. The second light shielding part 313B is formed so that the center of the second light shielding part 313B is shifted more to the peripheral side of a pixel region PA than the center of the pixel separation part 301, on the periphery of the center of the pixel region PA. In other words, "pupil correction" is performed for at least the second light shielding part. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012169530(A) 申请公布日期 2012.09.06
申请号 JP20110030840 申请日期 2011.02.16
申请人 SONY CORP 发明人 WATANABE KAZUFUMI
分类号 H01L27/146;H01L27/14;H04N5/374 主分类号 H01L27/146
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