| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can accurately detect a current flowing through a main cell, can improve the linearity of current detection and hardly receives the influence of the use of a high voltage. <P>SOLUTION: A main cell is placed on both sides of a sense cell, and an emitter of the sense cell is sandwiched by an emitter of the main cell. The structure can bring a density of current flowing through the emitter of the sense cell closer to a density of current flowing through the emitter of the main cell to bring a mirror ratio closer to a longitudinal emitter length ratio of the sense cell to the main cell. The density of the current flowing through the emitter of the sense cell can be brought closer to the density of the current flowing through the emitter of the main cell to inhibit a current amount per unit area from increasing to a higher level in the sense cell than in the main cell at switching or high current application. This can suppress a current variation and breakdown capacity can be improved. <P>COPYRIGHT: (C)2012,JPO&INPIT |
