发明名称 Deposition Method and Manufacturing Method of Light-Emitting Device
摘要 A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is provided; the surface of the first substrate on which the material layer is formed and a deposition target surface of a second substrate are disposed to face each other; and part of the material layer is deposited on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.
申请公布号 US2012225221(A1) 申请公布日期 2012.09.06
申请号 US201213474276 申请日期 2012.05.17
申请人 YAMAZAKI SHUNPEI;AOYAMA TOMOYA;TSURUME TAKUYA;HAMADA TAKAO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;AOYAMA TOMOYA;TSURUME TAKUYA;HAMADA TAKAO
分类号 B05D5/06 主分类号 B05D5/06
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