发明名称 |
ELECTRICAL BYPASS STRUCTURE FOR MEMS DEVICE |
摘要 |
An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
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申请公布号 |
US2012223613(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201113195243 |
申请日期 |
2011.08.01 |
申请人 |
HUNG CHIA-MING;WANG HUNG-SEN;CHEN HSIANG-FU;LEE TE-HSI;KALNITSKY ALEX;TAI WEN-CHUAN;CHANG KUEI-SUNG;TSAI YI HENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUNG CHIA-MING;WANG HUNG-SEN;CHEN HSIANG-FU;LEE TE-HSI;KALNITSKY ALEX;TAI WEN-CHUAN;CHANG KUEI-SUNG;TSAI YI HENG |
分类号 |
H02N11/00;H05K3/36 |
主分类号 |
H02N11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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