发明名称 |
VIRTUAL SEMICONDUCTOR NANOWIRE, AND METHODS OF USING SAME |
摘要 |
A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone. |
申请公布号 |
US2012223371(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201213470861 |
申请日期 |
2012.05.14 |
申请人 |
SHALEV GIL;DORON AMIHOOD;COHEN ARIEL |
发明人 |
SHALEV GIL;DORON AMIHOOD;COHEN ARIEL |
分类号 |
G01N27/414;H01L21/66 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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