发明名称 |
TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING EMBEDDED SEMICONDUCTOR ALLOYS IN DRAIN/SOURCE REGIONS |
摘要 |
By providing a test structure for evaluating the patterning process and/or the epitaxial growth process for forming embedded semiconductor alloys in sophisticated semiconductor devices, enhanced statistical relevance in combination with reduced test time may be accomplished. |
申请公布号 |
US2012223309(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201213474934 |
申请日期 |
2012.05.18 |
申请人 |
MOWRY ANTHONY;SCOTT CASEY;PAPAGEORGIOU VASSILIOS;WEI ANDY;LENSKI MARKUS;GEHRING ANDREAS;ADVANCED MICRO DEVICES, INC. |
发明人 |
MOWRY ANTHONY;SCOTT CASEY;PAPAGEORGIOU VASSILIOS;WEI ANDY;LENSKI MARKUS;GEHRING ANDREAS |
分类号 |
H01L23/58 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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