发明名称 |
METHOD OF FORMING AN ELECTRICAL FUSE AND A METAL GATE TRANSISTOR AND THE RELATED ELECTRICAL FUSE |
摘要 |
The present invention provides a method of integrating an electrical fuse process into a high-k/metal gate process. The method simultaneously forms a dummy gate stack of a transistor and a dummy gate stack of an e-fuse; and simultaneously removes the polysilicon of the dummy gate stack in the transistor region and the polysilicon of the dummy gate stack in the e-fuse region. Thereafter, the work function metal layer disposed in the opening of the e-fuse region is removed; and the opening in the transistor region and the opening in the e-fuse region with metal conductive structures are filled to form an e-fuse and a metal gate of a transistor. |
申请公布号 |
US2012225524(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201213469069 |
申请日期 |
2012.05.10 |
申请人 |
LIN YUNG-CHANG;WU KUEI-SHENG;WONG CHANG-CHIEN;UNITED MICROELECTRONICS CORP. |
发明人 |
LIN YUNG-CHANG;WU KUEI-SHENG;WONG CHANG-CHIEN |
分类号 |
H01L21/8232 |
主分类号 |
H01L21/8232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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