TWO-STEP SILICIDE FORMATION

摘要

An aspect of the invention includes a method for forming a semiconductor device with a two-step silicide formation. First, a silicide intermix layer is formed over a source/drain region and a portion of an adjacent extension region. Any spacers removed to accomplish this may be replaced. Dielectric material covers the silicide intermix layer over the source/drain region. A contact opening for a via is etched into the dielectric material. A second silicide contact is formed on the silicide intermix layer, or may be formed within the source/drain region as long as the second silicide contact still contacts the silicide intermix layer.