发明名称 |
Non-Volatile Storage System Using Opposite Polarity Programming Signals For MIM Memory Cell |
摘要 |
A reversible resistance-switching metal-insulator-metal (MIM) stack is provided which can be set to a low resistance state with a first polarity signal and reset to a higher resistance state with a second polarity signal. The first polarity signal is opposite in polarity than the second polarity signal. In one approach, the MIM stack includes a carbon-based reversible resistivity switching material such as a carbon nanotube material. The MIM stack can further include one or more additional reversible resistivity switching materials such as metal oxide above and/or below the carbon-based reversible resistivity switching material. In another approach, a metal oxide layer is between separate layers of carbon-based reversible resistivity switching material.
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申请公布号 |
US2012224413(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201213410848 |
申请日期 |
2012.03.02 |
申请人 |
ZHANG JINGYAN;THIRUNAVUKKARASU UTTHAMAN;SCHRICKER APRIL D. |
发明人 |
ZHANG JINGYAN;THIRUNAVUKKARASU UTTHAMAN;SCHRICKER APRIL D. |
分类号 |
G11C11/00;H01L45/00 |
主分类号 |
G11C11/00 |
代理机构 |
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