| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a charge pump circuit that complicates characteristic degradations and breakdowns of elements due to voltage application even if using a low element voltage semiconductor process. <P>SOLUTION: The charge pump circuit includes: an input terminal 1; low potential terminals 4a-4d; an output terminal 2; an output capacitor C7; a flying capacitor C6; a plurality of transistors M1-M4 configured to switch the flying capacitor C6 alternately between a charge state and a discharge state; and a plurality of bias circuits 10a-10d connected between gates and sources of the plurality of transistors, respectively. At least one bias circuit includes a first resistance R1 connected between the gate and source of the transistor corresponding to the bias circuit, and a voltage suppression circuit element (D1) connected in parallel with the first resistance to suppress a voltage generated across the first resistance to a predetermined voltage when a clock signal to turn off the transistor corresponding to the bias circuit is input. <P>COPYRIGHT: (C)2012,JPO&INPIT |
