发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 According to an embodiment, a block dividing unit groups l word lines into p groups, to divide a block into p divisional blocks. An erasing unit has an erasing operation performed on data stored in memory cells in a memory cell array, on a divisional block basis. An erasing verifying unit has an erasing verifying operation performed on memory cells subjected to the erasing operation, on a divisional block basis.
申请公布号 US2012224427(A1) 申请公布日期 2012.09.06
申请号 US201213407991 申请日期 2012.02.29
申请人 TAKEKIDA HIDETO;KABUSHIKI KAISHA TOSHIBA 发明人 TAKEKIDA HIDETO
分类号 G11C16/16 主分类号 G11C16/16
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