发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide semiconductor devices. <P>SOLUTION: A semiconductor device comprises: a first non-flat non-polar nitride semiconductor layer having a three-dimensional surface configuration and including a non-polar nitride semiconductor; a first structure layer on at least a portion of a surface of the first non-flat non-polar nitride semiconductor layer, the first structure layer including a plurality of solid particles; and a first non-polar nitride semiconductor layer on the first non-flat non-polar nitride semiconductor layer and the first structure layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012169628(A) |
申请公布日期 |
2012.09.06 |
申请号 |
JP20120029226 |
申请日期 |
2012.02.14 |
申请人 |
SAMSUNG ELECTRONICS CO LTD;SEOUL NATIONAL UNIV INDUSTRY FOUNDATION |
发明人 |
LEE SANG MOON;YOON EUIJOON;PARK JIN SUB;PARK SUNG HYEON |
分类号 |
H01L33/16;H01L21/205;H01L33/34 |
主分类号 |
H01L33/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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