发明名称 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide semiconductor devices. <P>SOLUTION: A semiconductor device comprises: a first non-flat non-polar nitride semiconductor layer having a three-dimensional surface configuration and including a non-polar nitride semiconductor; a first structure layer on at least a portion of a surface of the first non-flat non-polar nitride semiconductor layer, the first structure layer including a plurality of solid particles; and a first non-polar nitride semiconductor layer on the first non-flat non-polar nitride semiconductor layer and the first structure layer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012169628(A) 申请公布日期 2012.09.06
申请号 JP20120029226 申请日期 2012.02.14
申请人 SAMSUNG ELECTRONICS CO LTD;SEOUL NATIONAL UNIV INDUSTRY FOUNDATION 发明人 LEE SANG MOON;YOON EUIJOON;PARK JIN SUB;PARK SUNG HYEON
分类号 H01L33/16;H01L21/205;H01L33/34 主分类号 H01L33/16
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