SILICON STRUCTURE, CAPACITANCE ELEMENT USING SILICON STRUCTURE AND METHOD FOR MANUFACTURING SILICON STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a silicon structure having a three-dimensionally complicated shape, and a method for simply manufacturing the silicon structure using such a phenomenon that order naturally occurs and a pattern is orderly formed by the silicon structure itself.

SOLUTION: The method for manufacturing the silicon structure includes: performing a reaction process of subjecting an amorphous silicon layer to plasma treatment under a hydrogen atmosphere, and growing microcrystalline silicon on the surface of the silicon layer concurrently with a reaction process of etching the exposed amorphous silicon layer; forming a nano-structure formed of a microcrystalline upper structure and an amorphous lower structure on the silicon layer; and thereby forming a silicon structure having a three-dimensionally complicated shape.

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