| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing method capable of reducing sparse and dense micro-loading in a pattern where the dense space width is 20 nm or less. <P>SOLUTION: In the plasma processing method performing plasma etching of the silicon in a specimen having a mask of a pattern, where the dense space width is 20 nm or less, on a silicon substrate, etching of silicon is performed using a mixed gas of Cl<SB POS="POST">2</SB>gas and N<SB POS="POST">2</SB>gas under a pressure of 0.1 Pa while applying a time modulated intermittent high frequency power having a duty ratio of 5-50% to the specimen. <P>COPYRIGHT: (C)2012,JPO&INPIT |
