| 摘要 |
<P>PROBLEM TO BE SOLVED: To replace the atmosphere easily when the treatment gas is switched in the deposition process where a film is deposited on a plurality of substrates mounted, in the shelf-shape, on a substrate holder by supplying a plurality of kinds of treatment gas, reacting each other, in order. <P>SOLUTION: Apart from first gas injectors 51a, 51b formed, respectively, at gas discharge ports 52 for supplying treatment gas, such as Zr-based gas or O<SB POS="POST">3</SB>gas, into a reaction tube 12, a third gas injector 51c having a slit 50 formed in the length direction of the reaction tube 12 is provided. When switching the treatment gas, atmosphere in the reaction tube 12 is replaced by supplying a purge gas into the reaction tube 12 from the slit 50. <P>COPYRIGHT: (C)2012,JPO&INPIT |
