发明名称 LOW LEAKAGE VOLTAGE DETECTION CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a low leakage voltage detection circuit and method for not generating a leakage current due to a gate electrode drive voltage signal being an insufficient voltage. <P>SOLUTION: A low leakage voltage detection circuit includes a transmission gate 202, a feedback channel 204, and a controller 200, and is placed between a first device supplied with power by a first potential and a second device supplied with power by a second potential. Potential mismatch between the first device and the second device may cause a leakage current flowing through an input stage of the second device. By employing the low leakage voltage detection circuit, a high logic level generated by the first device is converted into a high logic level roughly equal to an amplitude of the second potential in correspondence. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012170041(A) 申请公布日期 2012.09.06
申请号 JP20110137296 申请日期 2011.06.21
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD 发明人 WANG WEN-HAN
分类号 H03K19/00 主分类号 H03K19/00
代理机构 代理人
主权项
地址