| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can achieve TM mode oscillation and high reliability. <P>SOLUTION: A semiconductor laser diode 70 comprises an n-type (Al<SB POS="POST">x1</SB>Ga<SB POS="POST">(1-x1)</SB>)<SB POS="POST">0.51</SB>In<SB POS="POST">0.49</SB>P clad layer 16, first and second p-type (Al<SB POS="POST">x1</SB>Ga<SB POS="POST">(1-x1)</SB>)<SB POS="POST">0.51</SB>In<SB POS="POST">0.49</SB>P clad layers 17, 19, an n-side Al<SB POS="POST">x2</SB>Ga<SB POS="POST">(1-x2)</SB>As guide layer 11 and a p-side Al<SB POS="POST">x2</SB>Ga<SB POS="POST">(1-x2)</SB>As guide layer 12 sandwiched by the n-type clad layer 16 and the p-type clad layers 17, 19, and an active layer 10 sandwiched by the guide layers 11, 12. The active layer 10 includes a quantum well layer 221 of a GaAs<SB POS="POST">(1-x3)</SB>P<SB POS="POST">x3</SB>layer and a barrier layer 222 of an Al<SB POS="POST">x2</SB>Ga<SB POS="POST">(1-x2)</SB>As layer which are repeatedly laminated a plurality of periods alternately. <P>COPYRIGHT: (C)2012,JPO&INPIT |
