| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a printing plate which allows good transistor characteristics to be realized, a pattern formation method using the same, and a method for manufacturing a thin film transistor. <P>SOLUTION: The method for manufacturing a thin film transistor at least including an insulative substrate, a gate electrode, a gate insulator layer, source and drain electrodes, a semiconductor layer formed to connect with the source and drain electrodes, and an encapsulation layer encapsulating the semiconductor layer comprises the steps of: using ink supply means to supply a functional ink to a recess of a printing plate with the recess and a protrusion formed on a surface thereof; transferring the functional ink supplied the recess onto a blanket; and transferring the functional ink on the blanket onto the substrate or the gate insulator layer to form any one of the gate electrode, the source electrode, the drain electrode, and the semiconductor layer. The steps are executed in this order. <P>COPYRIGHT: (C)2012,JPO&INPIT |
