发明名称 ATOMIC LAYER DEPOSITION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide an atomic layer deposition apparatus that improves use efficiency of a liquid raw material to stably supply a raw material gas pulsatively. <P>SOLUTION: The atomic layer deposition apparatus which forms a thin film on a substrate includes: a film-forming container having a raw material gas supply port and a reaction gas supply port formed therein; a raw material gas supply unit, which includes a liquid raw material storage unit that stores the liquid raw material, i.e. a raw material of the thin film, and a vaporization control unit that directly vaporizes the liquid raw material stored in the liquid raw material storage unit and controls a flow quantity, and which supplies the raw material gas to the raw material gas supply port; a reaction gas supply unit, which supplies to the reaction gas supply port the reaction gas that forms the thin film by reacting with the raw material gas; a control unit, which controls the raw material gas supply unit and the reaction gas supply unit such that the raw material gas and the reaction gas are alternately supplied; a collision plate that is disposed such that the raw material gas supplied from the raw material gas supply port collides with the plate; and a temperature adjusting unit, which adjusts the temperature of the collision plate. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012167317(A) 申请公布日期 2012.09.06
申请号 JP20110028623 申请日期 2011.02.14
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 MIYATAKE NAOMASA
分类号 C23C16/448;C23C16/455;H01L21/31 主分类号 C23C16/448
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