PLASMA PROCESSING METHOD, AND PLASMA PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a plasma processing method and a plasma processing device which allow the suppression of leak of a cooling gas supplied to between an electrostatic chuck for electrostatically attracting an insulative substrate and the substrate.

SOLUTION: The plasma processing method comprises: electrostatically attracting an insulative substrate S (substrate S) in a vacuum chamber 11 by an electrostatic chuck 17; and etching the substrate S by generating plasma in the vacuum chamber 11 while supplying helium gas for cooling the substrate S to a refrigerant space defined by the backside of the substrate S, and a reentrant 17c of the electrostatic chuck 17. The method further comprises periodically changing the polarity of a DC voltage applied to a chuck electrode 17b of the electrostatic chuck 17 by periodically switching a first switch SW1 and a second switch SW2 while the substrate S is being etched.

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