发明名称 |
Apparatus and Process for Atomic Layer Deposition |
摘要 |
Provided are atomic layer deposition apparatus and methods including a gas distribution plate with a thermal element. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate by temporarily raising or lowering the temperature.
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申请公布号 |
US2012225203(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201113037890 |
申请日期 |
2011.03.01 |
申请人 |
YUDOVSKY JOSEPH;APPLIED MATERIALS, INC. |
发明人 |
YUDOVSKY JOSEPH |
分类号 |
C23C16/46;C23C16/455 |
主分类号 |
C23C16/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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