发明名称 Apparatus and Process for Atomic Layer Deposition
摘要 Provided are atomic layer deposition apparatus and methods including a gas distribution plate with a thermal element. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate by temporarily raising or lowering the temperature.
申请公布号 US2012225203(A1) 申请公布日期 2012.09.06
申请号 US201113037890 申请日期 2011.03.01
申请人 YUDOVSKY JOSEPH;APPLIED MATERIALS, INC. 发明人 YUDOVSKY JOSEPH
分类号 C23C16/46;C23C16/455 主分类号 C23C16/46
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